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| BB439... Silicon Variable Capacitance Diode For VHF tuned circuit applications High figure of merit 1 Forward current Operating temperature range Storage temperature BB439 2 Type BB439 Package SOD323 Configuration single LS(nH) Marking 1.8 white 2 Maximum Ratings at TA = 25C, unless otherwise specified Parameter Diode reverse voltage Peak reverse voltage (R 5k ) IF Top Tstg 20 -55 ... 125 -55 ... 150 mA C Symbol VR VRM Value 28 30 Unit V 1 Jul-09-2003 BB439... Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 28 V VR = 28 V, TA = 85 C AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 25 V, f = 1 MHz CT Unit max. nA typ. IR 20 200 pF 31.5 26.5 4.3 43 34.5 29 5.1 6.9 5.8 0.35 37.5 31.5 6 8 6.5 3 0.5 % Capacitance ratio VR = 2 V, VR = 25 V, f = 1 MHz CT2 /CT25 CT3 /CT25 CT/CT 6 5 - Capacitance ratio VR = 3 V, VR = 25 V, f = 1 MHz VR = 3 V, VR = 25 V, f = 1 MHz VR = 10 V, f = 100 MHz Figure of merit VR = 3 V, f = 50 MHz VR = 25 V, f = 200 MHz 1For Q - 280 600 - details please refer to Application Note 047. 2 Jul-09-2003 Series resistance Capacitance matching1) rS BB439... Diode capacitance CT = f = 1MHz BB 439 (VR) Temperature coefficient of the diode 60 CT pF 50 EHD07036 10 -3 1/C TCc 40 30 10 -4 20 10 0 10 -1 10 0 10 1 V VR 10 2 10 -5 0 10 3 capacitance TCc = (VR ) 10 1 V 10 2 VR Jul-09-2003 |
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